Intel first to demonstrate working 45nm chips

Intel Corporation announced that it has become the first company to reach an
important milestone in the development of 45 nanometer (nm) logic technology.
Intel has produced what are believed to be the first fully functional SRAM
(Static Random Access Memory) chips using 45nm process technology, which is a
next- generation, high-volume semiconductor manufacturing process.

Achieving this milestone means Intel is on track to manufacture chips with
this technology by this year using 300mm wafers. This also depicts the company's
focus on pushing the limits of Moore's Law, by introducing a new process
generation every two years.

Today, Intel leads the industry in volume production of semicon­ductors
using 65nm process technology, with two manufacturing facilities making 65nm
chips in Arizona and Oregon and two more coming online this year in Ireland and
Oregon.

Intel engineer holding 300mm wafer with 45nm shuttle test chips

“Being first in producing semiconductors with 65nm process technology in
high volume and being the first with a working 45nm chip highlights Intel's
leadership position in chip technology and manufacturing,” said Bill Holt, VP
and GM, Intel Technology and Manufacturing Group. “Intel has a long history of
translating technology leaps into tangible benefits that people appreciate. Our
45nm technology will provide the foundation for delivering PCs with improved
performance-per-watt that will enhance the user experience.”

Intel's 45nm process technology will allow chips with more than five times
less leakage power than those made today. This will improve battery life for
mobile devices and increase opportunities for building smaller and more powerful
platforms.

The 45nm SRAM chip has more than one billion transistors. Though not intended
as an Intel product, the SRAM demonstrates technology perfor­mance and chip
reliability prior to ramping processors and other logic chips using the 45nm
manufact­uring pro­cess. It is a key first step in the march towards
high-volume manu­facturing of the world's most complex devices.

In addition to the manufacturing capabilities of its D1D facility in Oregon,
where the initial 45nm development efforts are underway, Intel has announced two
high-volume fabs, which are under construction. These fabs-are being
established for manufacturing chips using 45nm process technology-Fab 32 in
Arizona and Fab 28 in Israel.

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